Improved ohmic contacts for p-type ZnSe and related p-on-n diode structures
- 23 November 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (21), 2554-2556
- https://doi.org/10.1063/1.108124
Abstract
The problem of obtaining ohmic contacts for p‐type ZnSe is related to the deep valence band of ZnSe. We have addressed this problem by employing an epitaxial layer of the semimetal HgSe to decrease the interfacial energy barrier, or valence band offset, to about 0.6 eV. This has resulted in improved ohmic contacts for p‐type ZnSe films and related diode structures.Keywords
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