Optimum Cell Design for High-Performance A-Si:H Solar Cells Prepared by Photo-CVD
- 1 March 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (3R), 311
- https://doi.org/10.1143/jjap.28.311
Abstract
We have optimized the preparation conditions of p-i-n type a-Si:H solar cells prepared by photo-CVD. The pyramid-shaped SnO2 with haze ratio of 25% was chosen as the best TCO (transparent conductive oxide). The best efficiency obtained for a glass/TCO/p/buffer/i/n/Al structure of this type was 11.4% (V oc=0.90 V, I sc=17.86 mA/cm2, FF=0.706) for a 3×3 mm2 cell; the thicknesses of the p-, buffer-, i-, and n-layers were 50 A, 150 A, 7800 A, and 600 A, respectively.Keywords
This publication has 7 references indexed in Scilit:
- Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cellsJournal of Applied Physics, 1988
- Use of a carbon-alloyed graded-band-gap layer at the p/i interface to improve the photocharacteristics of amorphous silicon alloyed p-i-n solar cells prepared by photochemical vapor depositionJournal of Applied Physics, 1987
- Amorphous silicon p-i-n solar cells with graded interfaceApplied Physics Letters, 1986
- An amorphous silicon solar cell having a conversion efficiency of 10.50 percentIEEE Electron Device Letters, 1984
- Efficiency of the a-Si:H solar cell and grain size of SnO2transparent conductive filmIEEE Electron Device Letters, 1983
- Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cellsSolar Energy Materials, 1982
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981