Oxygen-Related Defects in Silicon
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Determination of Oxygen in Silicon by Photon Activation Analysis for Calibration of the Infrared AbsorptionJournal of the Electrochemical Society, 1984
- Isotope effects in the EPR spectrum of a tin-vacancy pair in siliconSolid State Communications, 1975
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Determination of parts per billion of oxygen in siliconSolid-State Electronics, 1970
- New Oxygen Infrared Bands in Annealed Irradiated SiliconPhysical Review B, 1964
- General Theory of Bimolecular Reaction Rates in Solids and LiquidsThe Journal of Chemical Physics, 1958
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957
- Temperature Dependence of the Hall Coefficients in Some Silver Palladium AlloysPhysical Review B, 1957
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956