High-Quality Carbon-Doped Boron Nitride Membrane for X-Ray Lithography Mask
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6A), L717-720
- https://doi.org/10.1143/jjap.31.l717
Abstract
Carbon-doped BN (BNC) membrane was fabricated by low pressure chemical vapor deposition (LPCVD) at a high temperature (750°C). Here, CH3NH2 was used as the reactive gas instead of NH3. The newly developed BNC has tensile stress and is transparent to visible light. A very small hydrogen content (3.3%) leads to the construction of strong atomic networks of B, N, and C, as well as to highly improved radiation stability.Keywords
This publication has 4 references indexed in Scilit:
- Minimization of X-Ray Mask Distortion by Two-Dimensional Finite Element Method SimulationJapanese Journal of Applied Physics, 1990
- Improvements of Stress Controllability and Radiation Resistance by Adding Carbon to Boron‐NitrideJournal of the Electrochemical Society, 1990
- Radiation damage effects in boron nitride mask membranes subjected to x-ray exposuresJournal of Vacuum Science & Technology B, 1987
- Characterization of hard transparent B–C–N–H thin films formed by plasma chemical-vapor deposition at room temperatureJournal of Applied Physics, 1985