Observation of multiple high-field domains in a dielectric-surface-loaded GaAs bulk element

Abstract

By observing potential distributions and corresponding current waveforms of a partially dielectric-surface-loaded GaAs bulk element, it is found that a domain nucleated at the unloaded cathode region fades away under the loaded region, nucleating another new domain at the cathode. This fading decreases with time after the application of a bias voltage, and eventually several domains of the same size can coexist, keeping a constant separation between them.