An investigation of the energy relaxation of warm electrons in indium phosphide by means of the magnetophonon effect

Abstract

The magnetophonon effect has been observed in the longitudinal and transverse magnetoresistance and the Hall voltage of n-InP under warm-electron conditions. Two distinct processes of electron energy relaxation are identified from the resonant structure: the first involves emission of a Gamma point LO phonon accompanied by the capture of the warm electron at an impurity site; the second corresponds to inter-Landau-level transitions by emission of a pair of TA phonons near the X point of the Brillouin zone. Three other extrema in the magnetoresistance are tentatively ascribed to resonant impact ionization of neutral donors.