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A high-speed bipolar LSI process using self-aligned double diffusion polysilicon technology
Home
Publications
A high-speed bipolar LSI process using self-aligned double diffusion polysilicon technology
A high-speed bipolar LSI process using self-aligned double diffusion polysilicon technology
KK
K. Kikuchi
K. Kikuchi
SK
S. Kameyama
S. Kameyama
MK
M. Kajiyama
M. Kajiyama
MN
M. Nishio
M. Nishio
TK
T. Komeda
T. Komeda
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1 January 1986
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1986.191208
Abstract
No abstract available
Keywords
POLYSILICON
DOUBLE
BIPOLAR LSI
ALIGNED
HIGH SPEED BIPOLAR
PROCESS USING
Cited by 13 articles