Infrared Absorption in Heavily Doped n‐Type Si
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 31 (1), 323-330
- https://doi.org/10.1002/pssb.19690310138
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Determination of Free Electron Effective Mass of n-Type SiliconJournal of Applied Physics, 1963
- Propriétés optiques des semiconducteurs dégénérésJournal de Physique et le Radium, 1963
- Optical Absorption of Arsenic-Doped Degenerate GermaniumPhysical Review B, 1962
- Abac Chart for Fast Calculation of the Absorption and Reflection CoefficientsApplied Optics, 1962
- Infrared Absorption in Heavily Doped-Type GermaniumPhysical Review B, 1962
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958
- Infrared Absorption in-Type SiliconPhysical Review B, 1957
- Impurity Band in Semiconductors with Small Effective MassPhysical Review B, 1955
- Infrared Absorption of Silicon Near the Lattice EdgePhysical Review B, 1955