Electron mobility in semiconductors based on a dielectric-function modification of the Dingle potential

Abstract

An alternative ionized-impurity potential, embodying a spatially variable dielectric function, has recently been proposed by Csavinszky. Unlike its predecessor, this potential incorporates the behavior of the dielectric function at the origin. The electron conductivity mobilities, calculated for Si and Ge from these potentials, have been compared numerically with the corresponding prediction of the Dingle theory. In a previous Comment, it was shown that the mobility based on the first potential overestimated this prediction. Here, it is found that the second potential is also questionable because it leads to a gross underestimation. A possible reason for this behavior is suggested.