Two-dimensional microscopic uniformity of resistivity in semi-insulating GaAs

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Abstract
The two-dimensional microscopic uniformity of resistivity has been studied using the three-electrode guard method with 70-μm resolution as a new microscopic characterization technique for semi-insulating GaAs. A clear microscopic correlation between resistivity and crystal defects is revealed for the first time by this method. In undoped GaAs, a significant decrease of resistivity greater than one order of magnitude is observed at the vicinity of the walls of dislocation clustered networks and slip lines. Resistivity fluctuation corresponding to rotational growth striation is also observed in undoped GaAs.