Interpolation of the Energy Bands of Semiconductors with the Diamond Structure on the Basis of the Tight Binding Method
- 1 January 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 38 (2), A135-A139
- https://doi.org/10.1002/pssb.19700380248
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Empirical Third Neighbour LCAO Energy Bands of SiliconPhysica Status Solidi (b), 1968
- Consistent Treatment of Symmetry in the Tight Binding ApproximationPhysica Status Solidi (b), 1968
- Fourier Expansion for the Electronic Energy Bands in Silicon and GermaniumPhysical Review B, 1967
- Intrinsic and Extrinsic Recombination Radiation from Natural and Synthetic Aluminum-Doped DiamondPhysical Review B, 1965
- Intrinsic edge absorption in diamondProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1964
- Energy-Band Interpolation Scheme Based on a PseudopotentialPhysical Review B, 1958
- Energy Band Structure in Silicon Crystals by the Orthogonalized Plane-Wave MethodPhysical Review B, 1957
- Simplified LCAO Method for the Periodic Potential ProblemPhysical Review B, 1954