A new multicolor electroluminescent device

Abstract

A new multicolor ac thin-film electroluminescent device is hereby proposed. This device differs from usual devices in the structure of its active layer, i.e., the additional layer (‘‘gate layer’’) is buried in ZnS active layers. Thus, the structure of the device is a glass substrate: SnOx-Y2O3-ZnS:SmF3-gate layer-ZnS:ErF3-Y2O3-Al. In particular, when the gate layer is a thin SmF3 film (approximately 500 Å) or an extremely thin Al film (approximately 100 Å), the emission color of the device continuously varies between red and green with the driving voltage or frequency.