GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications
- 1 August 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (8), 306-309
- https://doi.org/10.1109/edl.1984.25926