Polyiodide‐treatedn‐WSe2/Au Schottky junctions
- 22 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (21), 2085-2087
- https://doi.org/10.1063/1.101510
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Schottky-barrier formation on a covalent semiconductor without Fermi-level pinning: The metal-(0001) interfacePhysical Review B, 1987
- Passivation of recombination centers in n-WSe2 yields high efficiency (>14%) photoelectrochemical cellApplied Physics Letters, 1985
- A kinetic interpretation of the photocurrents obtained with [Fe(CN)6]4−, Fe(II), and I− at n-type MoSe2- and WSe2-electrodesElectrochimica Acta, 1981
- The photoelectrochemistry of the aqueous iodide/iodine redox system at n-type MoSe2-electrodesElectrochimica Acta, 1981
- Semiconductor Electrodes: XXXIV . Photoelectrochemistry of p‐Type in Acetonitrile and the CellJournal of the Electrochemical Society, 1981
- Semiconductor Electrodes: XXXIII . Photoelectrochemistry of n‐Type in AcetonitrileJournal of the Electrochemical Society, 1981
- Electrochemical solar cells based on layer-type transition metal compounds: Performance of electrode materialSolar Energy Materials, 1979
- Photovoltaic properties of some semiconducting layer structuresPhysica Status Solidi (a), 1978
- Hole Reactions from d‐Energy Bands of Layer Type Group VI Transition Metal Dichalcogenides: New Perspectives for Electrochemical Solar Energy ConversionJournal of the Electrochemical Society, 1978
- Solar Energy-Assisted Electrochemical Splitting of Water. Some Energetical, Kinetical and Catalytical Considerations Verified on MoS2 Layer Crystal SurfacesZeitschrift für Naturforschung A, 1977