Non-volatile FCG (ferroelectric-capacitor and transistor-gate connection) memory cell with non-destructive read-out operation

Abstract

A new non-volatile FCG (ferroelectric-capacitor and transistor-gate connection) memory cell, in which the ferroelectric capacitor is connected to a MOSFET gate electrode, is proposed for achieving non-destructive read-out memory operation. It is clarified that the ferroelectric capacitor area should be designed to be smaller than the MOSFET gate capacitor area to improve memory operation reliability. Nonvolatile memory operation for this FCG cell was confirmed by a Vt shift in the MOSFET, due to the ferroelectric polarization.