Silicon donor-acceptor pair defects in gallium arsenide
- 28 October 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (20), L785-L788
- https://doi.org/10.1088/0022-3719/12/20/003
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The detection of strain in neutron irradiated gallium arsenide from local mode absorption measurementsPhilosophical Magazine, 1977
- Infrared absorption of mixed silicon isotope pairs in gallium arsenideJournal of Applied Physics, 1974
- Localized vibrational modes in gallium arsenide containing silicon and boronJournal of Physics C: Solid State Physics, 1972
- Infrared absorption by point defects in gallium arsenideJournal of Physics C: Solid State Physics, 1972
- Local-Mode Absorption and Defects in Compensated Silicon-Doped Gallium ArsenideJournal of Applied Physics, 1968