Absorption of Siin the Extreme Ultraviolet
- 20 September 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 27 (12), 774-776
- https://doi.org/10.1103/physrevlett.27.774
Abstract
The absorption spectrum of Si gas has been measured in the silicon region. Three spin-orbit-split Rydberg series with sharp structure have been observed converging on the edges of Si at 107.2 and 107.8 eV. The three series correspond in a unitedatom picture (the united atom for Si is argon) to transitions from a core state to and higher states and to and higher states states are split into two components by the molecular field). A molecular-orbital calculation of some peak positions gives reasonable agreement with experiment.
Keywords
This publication has 10 references indexed in Scilit:
- Extreme Ultraviolet Spectroscopy with the Use of a Storage Ring Light SourceReview of Scientific Instruments, 1970
- Photoelectron Spectra of Methane, Silane, Germane, Methyl Fluoride, Difluoromethane, and TrifluoromethaneThe Journal of Chemical Physics, 1970
- Discrete structure in the 40-60 Angstrom region of the photoionization continua of argon, krypton and xenonJournal of Physics B: Atomic and Molecular Physics, 1969
- Resonances in the Photo-ionization Continuum of Ar i (20-150 eV)Physical Review B, 1969
- Absorption Structure Near theEdge of Argon GasPhysical Review Letters, 1968
- Spectral Distribution of Atomic Oscillator StrengthsReviews of Modern Physics, 1968
- K-Absorption Fine Structures of Sulfur in Gaseous SF6The Journal of Chemical Physics, 1966
- Spectra of X-Ray Absorption in the Shell of Si in Gaseous Si and in the Shell of Ge in Gaseous GePhysical Review B, 1966
- One-Center Expansion Self-Consistent Field Molecular Orbital Electronic Wave Functions for XHn MoleculesThe Journal of Chemical Physics, 1962
- The Absolute Absorption Coefficient of Germanium and the Fine Structure in theEdge of Some of its CompoundsPhysical Review B, 1951