Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures
- 1 September 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (9R)
- https://doi.org/10.1143/jjap.30.1924
Abstract
High-quality, well-controlled GaN/Al0.1Ga0.9N layered structures with periodicity varying from 4.5 nm to 60 nm have been successfully grown on (0001) sapphire substrates by Metalorganic Vapor Phase Epitaxy (MOVPE). The layered structure has been confirmed by double-crystal X-ray diffractometry. Photoluminescence peak energy showed a shift toward the higher-energy side with decreasing thickness of the GaN well layer, which is in good agreement with the calculation obtained from the Kronig-Penny analysis.Keywords
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