Phonon-assisted tunneling due to localized modes in double-barrier structures
- 15 October 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (15), 8181-8184
- https://doi.org/10.1103/physrevb.44.8181
Abstract
The excess current associated with phonon-assisted tunneling at low temperature in GaAs/AlAs double-barrier resonant-tunneling structures is calculated taking into account localized phonon modes. We find that symmetric interface phonon modes generate the most current in a typical structure, while confined modes in the GaAs well also contribute significantly. Antisymmetric interface modes and confined modes in AlAs barrier layers generate much less current. Numerical results are in unexpect- edly close agreement with available experimental data.Keywords
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