Characterization of deep levels in zinc oxide
- 1 March 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (5), 1781-1783
- https://doi.org/10.1063/1.339919
Abstract
An electron trap of 0.3 eV depth was characterized in hydrothermally grown, single‐crystal zinc oxide using deep‐level transient spectroscopy. Specimens were fabricated with Ag Schottky contacts on (0001) surfaces. The capture cross section was determined to be 2.6×10−14 cm2. The defect is a native donor and is attributed to a singly ionized oxygen vacancy V•O.Keywords
This publication has 12 references indexed in Scilit:
- Bulk electron traps in zinc oxide varistorsJournal of Applied Physics, 1986
- DLTS Measurement on Non-Ohmic Zinc Oxide Ceramic VaristorJapanese Journal of Applied Physics, 1980
- Deep-level-transient spectroscopy: System effects and data analysisJournal of Applied Physics, 1979
- New Developments in Defect Studies in SemiconductorsIEEE Transactions on Nuclear Science, 1976
- Theory of varistor electronic propertiesC R C Critical Reviews in Solid State Sciences, 1975
- Admittance spectroscopy of impurity levels in Schottky barriersJournal of Applied Physics, 1975
- Nonohmic Properties of Zinc Oxide CeramicsJapanese Journal of Applied Physics, 1971
- Surface Barriers on Zinc OxideJournal of Applied Physics, 1970
- Radiation Damage in ZnO Single CrystalsPhysical Review B, 1968
- Surface barriers on ZnSe and ZnOPhysics Letters, 1965