Carrier density fluctuation noise in silicon junction field effect transistors at low temperatures
- 31 October 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (10), 985-993
- https://doi.org/10.1016/0038-1101(71)90167-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Anomalous noise behavior of the junction-gate field-effect transistor at low temperaturesIEEE Transactions on Electron Devices, 1970
- Electric Conductivity of Hot Carriers in Si and GePhysica Status Solidi (b), 1969
- Lifetime and capture cross-section studies of deep impurities in siliconMaterials Science and Engineering, 1968
- Extrinsic ir Photoconductivity of Si Doped with B, Al, Ga, P, As, or SbJournal of Applied Physics, 1967
- Fluctuations of the Numbers of Electrons and Holes in a SemiconductorProceedings of the Physical Society. Section B, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954