Plasma-enhanced growth, composition, and refractive index of silicon oxy-nitride films
- 15 June 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (12), 6616-6623
- https://doi.org/10.1063/1.359072
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Effect of rf power on remote-plasma deposited SiO2 filmsJournal of Applied Physics, 1993
- Plasma‐Deposited Silicon Oxynitride from Silane, Nitrogen, and Carbon Dioxide or Carbon Monoxide or Nitric OxideJournal of the Electrochemical Society, 1992
- Simple technologies for fabrication of low-loss silica waveguidesElectronics Letters, 1992
- Low Temperature Deposition of SiO2 by Distributed Electron Cyclotron Resonance Plasma‐Enhanced Chemical Vapor DepositionJournal of the Electrochemical Society, 1992
- Plasma-enhanced chemical vapor deposition of low-loss SiON optical waveguides at 15-μm wavelengthApplied Optics, 1991
- Low loss Si_3N_4–SiO_2 optical waveguides on SiApplied Optics, 1987
- Plasma-enhanced growth and composition of silicon oxynitride filmsJournal of Applied Physics, 1986
- Characterization of Silicon‐Oxynitride Films Deposited by Plasma‐Enhanced CVDJournal of the Electrochemical Society, 1986
- Variation of Hydrogen Bonding, Depth Profiles, and Spin Density in Plasma‐Deposited Silicon Nitride and Oxynitride Film with Deposition MechanismJournal of the Electrochemical Society, 1986
- Properties of Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1979