Striation etching of undoped, semi-insulating lec-grown GaAs
- 30 April 1982
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 57 (2), 459-461
- https://doi.org/10.1016/0022-0248(82)90506-1
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Growth and characterization of large diameter undoped semi-insulating GaAs for direct ion implanted FET technologySolid-State Electronics, 1981
- Growth of high-purity semi-insulating bulk GaAs for integrated-circuit applicationsIEEE Transactions on Electron Devices, 1981
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965