Characterisation of silicon carbide detectors response to electron and photon irradiation
- 1 March 2001
- journal article
- Published by Elsevier BV in Diamond and Related Materials
- Vol. 10 (3-7), 657-661
- https://doi.org/10.1016/s0925-9635(00)00380-0
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Characterisation of CVD diamond dosimeters in on-line configurationNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2000
- Characterization of CVD diamond films as radiation detectors for dosimetric applicationsIEEE Transactions on Nuclear Science, 2000
- A study of radiotherapy dosimeters based on diamond grown by chemical vapour depositionDiamond and Related Materials, 2000
- Review of the development of diamond radiation sensorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
- Development of radiation-hard materials for microstrip detectorsIEEE Transactions on Nuclear Science, 1999
- Modelling of SiC sublimation growth process: analyses of macrodefects formationMaterials Science and Engineering B, 1999
- Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHCNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1999
- Charge collection and noise analysis of heavily irradiated silicon detectorsIEEE Transactions on Nuclear Science, 1998
- Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopyphysica status solidi (a), 1997
- Analysis of neutron damage in high-temperature silicon carbide JFETsIEEE Transactions on Nuclear Science, 1994