Raman scattering of (GaAs)n(AlAs)n superlattices
- 29 February 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 65 (7), 661-663
- https://doi.org/10.1016/0038-1098(88)90359-6
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Ultrathin-layer (AlAs) m (GaAs) m superlattices withm = 1,2,3 grown by molecular beam epitaxyApplied Physics A, 1987
- Phonons in semiconductor superlatticesIEEE Journal of Quantum Electronics, 1986
- Comment on "Resonance Raman Scattering by Confined LO and TO Phonons in GaAs-AlAs Superlattices"Physical Review Letters, 1986
- Soodet al.RespondPhysical Review Letters, 1986
- Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxyApplied Physics Letters, 1985
- Resonance Raman Scattering by Confined LO and TO Phonons in GaAs-AlAs SuperlatticesPhysical Review Letters, 1985
- Folded acoustic and quantized optic phonons in (GaAl)As superlatticesPhysical Review B, 1985
- Theory of phonon dispersion relations in semiconductor superlatticesPhysical Review B, 1984
- "Folded" optical phonons insuperlatticesPhysical Review B, 1984
- The Raman effect in crystalsAdvances in Physics, 1964