Charge disturbances around neutral defects: A simple new method applied to the ideal silicon vacancy
- 15 May 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 19 (10), 5232-5239
- https://doi.org/10.1103/physrevb.19.5232
Abstract
We suggest a new method for calculating the charge disturbance around a neutral defect which we develop in detail for the ideal vacancy in silicon. Comparison with Green's-function results of Baraff and Schlüter indicates that the method is quite accurate, yet extremely simple.Keywords
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