Technique for profiling 1H with 2.5-MeV Van de Graaff accelerators
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (11), 811-813
- https://doi.org/10.1063/1.90654
Abstract
We describe an elastic recoil detection (ERD) analysis technique for profiling 1H in the near‐surface regions of solids using a 2.5‐MeV Van de Graaff accelerator commonly used for ion‐backscattering analysis. Energy analysis of 1H forward scattered by 2.4‐MeV 4He incident on the target tilted at an angle of ∼75° yields a depth resolution of ≲700 Å and a sensitivity of better than 0.1 at.% for 1H to depths of ≲0.6 μm in solids.Keywords
This publication has 5 references indexed in Scilit:
- Hydrogen concentration profiles and chemical bonding in silicon nitrideJournal of Electronic Materials, 1979
- Measurement of hydrogen depth distribution by resonant nuclear reactionsApplied Physics Letters, 1977
- Depth profiling of light elements in materials with high-energy ion beamsJournal of Vacuum Science and Technology, 1977
- An accurate and sensitive method for the determination of the depth distribution of light elements in heavy materialsJournal of Applied Physics, 1976
- Hydrogen implantation in silicon between 1.5 and 60 kevRadiation Effects, 1976