Electrical Properties of p‐Type ZnSnAs2 Crystals at Low Temperatures
- 1 January 1965
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 8 (3), K159-K162
- https://doi.org/10.1002/pssb.19650080338
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Dependence of the Thermal E.M.F. on the Hole Concentration in Gallium Arsenide CrystalsPhysica Status Solidi (b), 1965
- Энергетические зоны в полупроводникахUspekhi Fizicheskih Nauk, 1963
- Impurity Conduction in Transmutation-Doped-Type GermaniumPhysical Review B, 1960
- Electrical Properties of-Type Indium Antimonide at Low TemperaturesPhysical Review B, 1955