The redistribution and electrical characteristics of ion‐implanted S in have been investigated using secondary ion mass spectrometry (SIMS) and Hall profiling in the dose range of . A significant dose dependence of the redistribution has been observed, with the light dose implants exhibiting the most severe diffusion during annealing. In the presence of a sufficiently high level of Si doping, the redistribution of implanted S is reduced for annealing temperatures up to 800°C, possibly due to the formation of a S‐Si complex. Suitably chosen dual implants show a similar effect and result in a higher activation efficiency than is achievable by Si‐only implants of the same total dose. Implantation damage produced by Ar and S dual implants also causes significant redistribution changes. Low levels of damage enhance the S redistribution during annealing, while a high level of damage strongly inhibits it for temperatures up to 900°C. Where the S redistribution is inhibited by damage, however, electrical activity is reduced or lost.