Small-signal equivalent π networks for carrier generation–recombination–trapping at imperfection centres in semiconductors

Abstract

A π network for carrier generation–recombination–trapping processes under arbitrary steady-state conditions is obtained, which has the following features which are useful for computer calculations of the admittance functions of semiconductor devices: the admittances are positive real, the voltage-controlled current sources are connected between the hole and electron quasi-Fermi potential nodes, and the current sources vanish at zero external excitation.