CVD growth and characterization of single-crystalline 6H silicon carbide
- 1 April 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 185 (1-4), 75-78
- https://doi.org/10.1016/0921-4526(93)90216-s
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimationMaterials Science and Engineering B, 1992
- Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafersApplied Physics Letters, 1990
- Morphology and growth rate oF β-SiC grown on (100) silicon by chemical vapor depositionMaterials Letters, 1989
- Evaluation of structural quality of a silicon carbide (6H-SiC) single crystal grown by a vapor transport method by Rutherford backscattering spectroscopyJournal of Applied Physics, 1989
- Step-Controlled Epitaxial Growth of SiCMRS Proceedings, 1989
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- Epitaxial Growth of α-SiC from the Vapor PhaseJapanese Journal of Applied Physics, 1971
- Growth Characteristics of Alpha-Silicon CarbideJournal of the Electrochemical Society, 1971
- Growth Characteristics of Alpha-Silicon CarbideJournal of the Electrochemical Society, 1971
- Infrared Properties of Hexagonal Silicon CarbidePhysical Review B, 1959