Several kinds of silicon-containing resist materials for bi-layer resist systems devel-oped in our' Laboratories are reported. For negative working resists, poly(trimethylsilylstyrene-co-chloromethylstyrene) ( P(SiSt-CMS) ) and a mixture of poly(triallylphenylsilane) with bisazide ( TAS ) have been developed. P(SiSt-CMS) was designed for EB or deep UV exposure. TAS suits to use in near UV lithographic tools. For positive working resists, SIPR (a partly trimethylsilyl-methylated resorcinol-formaldehyde resin mixed with naphthoquinonediazide) was developed. Syntheses, lithographic data and applications to bi-layer systems of these resists are given.