Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors.
- 4 June 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 92 (22)
- https://doi.org/10.1103/PhysRevLett.92.226802
Abstract
We present a detailed study on the impact of multimode transport in carbon nanotube field-effect transistors. Under certain field conditions electrical characteristics of tube devices are a result of the contributions of more than one one-dimensional subband. Through potassium doping of the nanotube the impact of the different bands is made visible. We discuss the importance of scattering for a stepwise change of current as a function of gate voltage and explain the implications of our observations for the performance of nanotube transistors.Keywords
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