The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures
- 15 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 648-651
- https://doi.org/10.1016/s0022-0248(98)00233-4
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Optical linewidths of InGaN light emitting diodes and epilayersApplied Physics Letters, 1997
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopyApplied Physics Letters, 1996
- Current-voltage characteristics of strained piezoelectric structuresJournal of Applied Physics, 1995
- Emerging gallium nitride based devicesProceedings of the IEEE, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structureJournal of Applied Physics, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992