SENSIM: A simulation program for solid-state pressure sensors

Abstract

A simulation program is described which is capable of calculating the output response of silicon piezoresistive or capacitive pressure sensors as a function of both pressure and temperature. A thermoelastic plane-stress formulation is used in calculating the stress and deflection of the transducer diaphragm. Both analytical and finite-difference solution methods are available, depending on the sensor structure. Diaphragm thickness taper, oxide and package stress, and rim effects are simulated. For capacitive structures, the program accurately predicts the diaphragm deflection and pressure sensitivity as a function of pressure and temperature. Stepped diaphragm structures are shown to be capable of improving pressure sensitivity by as much as 50 percent. The package-induced thermal drift for electrostatically sealed glass-silicon devices is typically less than 0.05 mmHg/°C.