Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (1), 2-7
- https://doi.org/10.1109/16.2408
Abstract
No abstract availableKeywords
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