SEM and TEM studies of defects in Si‐doped GaAs substrate material before and after Zn diffusion
- 1 March 1980
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 118 (3), 343-349
- https://doi.org/10.1111/j.1365-2818.1980.tb00283.x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The identification of saucer-pit (S-pit) defects in GaAsJournal of Materials Science, 1978
- Semiconductor material assessment by scanning electron microscopy*Journal of Microscopy, 1977
- Anisotropic etching behaviour of gallium arsenide junctionsJournal of Materials Science, 1974
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- The junction depth of concentration-dependent diffusion. Zinc in III–V compoundsSolid-State Electronics, 1964
- Rapid zinc diffusion in gallium arsenideSolid-State Electronics, 1962
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957