Al/Al2O3/InP MIS structures
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (11), 807-808
- https://doi.org/10.1063/1.90652
Abstract
Metal‐insulator‐semiconductor (MIS) structures were produced by electron‐beam deposition of Al2O3 on InP. The electrical properties of such structures were investigated. For optimum conditions, capacitance/voltage (C/V) measurements show that the interface state density can be reduced to 1011 states cm−2 eV−1 by heat treatments. Capacitance transient measurements lead to an estimate of 2×103 cm sec−1 for the surface recombination velocity.Keywords
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