High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
- 26 February 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (9), 851-853
- https://doi.org/10.1063/1.102682
Abstract
By increasing the quantum well barrier width, we have dramatically reduced the tunneling dark current by an order of magnitude and thereby significantly increased the blackbody detectivity D*BB. For a GaAs quantum well infrared detector having a cutoff wavelength of λc=10.7 μm, we have achieved D*BB =1.0×1010 cm (Hz)1/2/W at T=68 K, a temperature which is readily achievable with a cryogenic cooler.Keywords
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