Free and bound electron transitions to acceptors in indium phosphide
- 30 September 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 11 (5), 725-728
- https://doi.org/10.1016/0038-1098(72)90495-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Far-infrared photoconductivity from the shallow donors in n-InPSolid State Communications, 1971
- Two-hole transition in the luminescence of excitons bound to neutral acceptors in GaAsSolid State Communications, 1971
- The theory of the energy shift of donor—Acceptor pair emission with varying excitation intensityJournal of Luminescence, 1971
- Electron mobilities and photoluminescence of solution grown indiumphosphide single crystalsJournal of Physics and Chemistry of Solids, 1970
- The preparation of high purity epitaxial InPSolid State Communications, 1970
- Photoluminescence of Ge-doped GaAs grown by vapor-phase epitaxyJournal of Physics and Chemistry of Solids, 1969
- Evidence for donor-acceptor recombination in InP by time-resolved photoluminiscence spectroscopySolid State Communications, 1969
- Radiative Recombination in-Type InPPhysical Review B, 1967
- Pair Spectra and "Edge" Emission in Gallium PhosphidePhysical Review B, 1964
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960