Recent progress in transparent oxide semiconductors: Materials and device application
Top Cited Papers
- 24 January 2007
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 515 (15), 6000-6014
- https://doi.org/10.1016/j.tsf.2006.12.125
Abstract
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This publication has 66 references indexed in Scilit:
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire ArraysScience, 2006
- Transparent ring oscillator based on indium gallium oxide thin-film transistorsSolid-State Electronics, 2006
- Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSeApplied Physics Letters, 2004
- Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloysJournal of Applied Physics, 2003
- Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnOApplied Physics Letters, 2003
- Field emission from well-aligned zinc oxide nanowires grown at low temperatureApplied Physics Letters, 2002
- Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOSApplied Physics Letters, 2002
- Electronic transport in degenerate amorphous oxide semiconductorsPhilosophical Magazine Letters, 1999
- Untersuchungen der elektrischen und lichtelektrischen Leitfähigkeit dünner IndiumoxydschichtenThe European Physical Journal A, 1954