Changes in ac Conductivity of Silicon with Electron Irradiation at 0.5 K
- 15 December 1972
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 6 (12), 4571-4574
- https://doi.org/10.1103/physrevb.6.4571
Abstract
Si was irradiated with 1.5-MeV electrons at 0.5 K. Changes in ac conductivity were dependent upon the dopant in the Si. No significant recovery of ac conductivity was observed with annealing up to 300 K. These results are consistent with previously published results at 1.6 K. These data support the suggestion that athermal migration of the Si interstitial occurs.Keywords
This publication has 3 references indexed in Scilit:
- Properties of the Interstitial in the Diamond-Type LatticePhysical Review Letters, 1971
- Electron-Irradiation Effects in Silicon at Liquid-Helium Temperatures Using ac Hopping ConductivityPhysical Review B, 1971
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961