Improving the characteristics of an InAlAsInGaAs inverted HEMT by inserting an InAs layer into the InGaAs channel
- 31 May 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (5), 997-1000
- https://doi.org/10.1016/0038-1101(95)98667-r
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure by inserting a strained InAs quantum wellApplied Physics Letters, 1994
- Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channelIEEE Electron Device Letters, 1992
- High-frequency performance for sub-0.1 μm gate InAs-inserted-channel InAlAs/InGaAs HEMTElectronics Letters, 1992
- W-band low-noise InAlAs/InGaAs lattice-matched HEMTsIEEE Electron Device Letters, 1990
- Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low-temperature mobility of 2×106 cm2/V sApplied Physics Letters, 1989
- Summary Abstract: The growth of strained InGaAs on GaAs: Kinetics versus energeticsJournal of Vacuum Science & Technology B, 1988
- Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device propertiesApplied Physics Letters, 1988