ESR and Raman Studies on Hydrogenated Amorphous Si–Sn
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10A), L812
- https://doi.org/10.1143/jjap.23.l812
Abstract
Results of electron spin resonance (ESR) and Raman scattering measurements are reported for hydrogenated amorphous Si–Sn (a-Si1-x Sn x :H) films prepared by r.f. sputtering of planar-magnetron type at a substrate temperature of 100°C. Sn dangling bonds are observed by ESR measurement in a–Si1-x Sn x :H films. This is the first observation of Sn dangling bonds by ESR. In Raman spectra, Si–Si, Si–Sn and Sn–Sn vibrational bands are observed at 480, 310 and 150 cm-1, respectively.Keywords
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