GaAs-Cs: A new type of photoemitter
- 31 August 1965
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 3 (8), 189-193
- https://doi.org/10.1016/0038-1098(65)90289-9
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962
- Interband Transitions in Groups 4, 3-5, and 2-6 SemiconductorsPhysical Review Letters, 1962
- Photoemission and Related Properties of the Alkali-AntimonidesJournal of Applied Physics, 1960
- Photoelectric emission and work functions of InSb, GaAs, Bi2Te3 and germaniumJournal of Physics and Chemistry of Solids, 1959
- Photoelectric Emission and Contact Potentials of SemiconductorsPhysical Review B, 1948