Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices
- 22 September 1989
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 245 (4924), 1369-1371
- https://doi.org/10.1126/science.245.4924.1369
Abstract
Negative differential resistance (NDR) is the essential property that allows fast switching in certain types of electronic devices. With scanning tunneling microscopy (STM) and scanning tunneling spectroscopy, it is shown that the current-voltage characteristics of a diode configuration consisting of an STM tip over specific sites of a boron-exposed silicon(111) surface exhibit NDR. These NDR-active sites are of atomic dimensions (∼1 nanometer). NDR in this case is the result of tunneling through localized, atomic-like states. Thus, desirable device characteristics can be obtained even on the atomic scale.Keywords
This publication has 14 references indexed in Scilit:
- Adsorption of boron on Si(111): Its effect on surface electronic states and reconstructionPhysical Review Letters, 1989
- Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopyPhysical Review B, 1989
- Electronic Structure of Localized Si Dangling-Bond Defects by Tunneling SpectroscopyPhysical Review Letters, 1988
- Atom-resolved surface chemistry using scanning tunneling microscopyPhysical Review Letters, 1988
- Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometriesPhysical Review B, 1987
- Quantum States and Atomic Structure of Silicon SurfacesScience, 1986
- Spectroscopy of single atoms in the scanning tunneling microscopePhysical Review B, 1986
- Photoemission study of the surface and bulk electronic structures of Si(111)7×7 and Si(111)≤3¯×≤3¯:AlPhysical Review B, 1985
- Theory of atomic chemisorption on simple metalsPhysical Review B, 1978
- New Phenomenon in Narrow GermaniumJunctionsPhysical Review B, 1958