The study of charge carrier kinetics in semiconductors by microwave conductivity measurements

Abstract

The study of the excess conductivity induced in a material by pulsed optical excitation yields information on the optoelectronic properties of the material and is receiving increasing attention. As conventional conductivity techniques are hampered by the need to apply electrical contacts, we have investigated the reliability and the possibilities of microwave conductivity measurements. This paper first presents the general background for excess conductivity measurements in the microwave range, and then derives the quantitative relationship between the reflected microwave signal and the change in conductivity for a wafer of single‐crystalline Si. For this sample, the theory of excess charge carrier kinetics is also developed. After a short description of our apparatus, kinetic measurements on a nano‐ and microsecond timescale are compared to theory.