Monolithic integration of a light-emitting diode array and a silicon circuit using transfer processes
- 31 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (22), 2760-2762
- https://doi.org/10.1063/1.109252
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Applications and challenges of OEIC technology: a report on the 1989 Hilton Head workshopJournal of Lightwave Technology, 1990
- 1.31–1.36[micro sign]m optical amplification in Nd3+-doped fluorozirconate fibreElectronics Letters, 1990
- InGaP orange light-emitting diodes on Si substratesApplied Physics Letters, 1989
- 660 nm In0.5Ga0.5P light-emitting diodes on Si substratesApplied Physics Letters, 1988
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET'sIEEE Electron Device Letters, 1986
- A technique for producing epitaxial films on reuseable substratesApplied Physics Letters, 1980