Green Injection Luminescence from Forward-Biased Au–GaP Schottky Barriers
- 1 December 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (13), 5863-5865
- https://doi.org/10.1063/1.1660028
Abstract
Improvements in the minority‐carrier injection efficiency of GaP Schottky diodes are achieved by the incorporation, into the device, of a thin insulating layer separating the metal and the semiconductor. This enables visible green luminescence to be obtained from the diodes in forward bias. Measurements of the optical and electrical characteristics of this device are reported.Keywords
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