Gain switching of semiconductor injection lasers
- 25 January 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (4), 257-259
- https://doi.org/10.1063/1.99486
Abstract
The limiting factors in short pulse generation by gain switching of semiconductor lasers are analyzed using an approach parallel to conventional Q switching analysis. The dependence of the gain‐switched pulse width and pulse energy on various input parameters such as drive current amplitude, bias current, and spontaneous emission factor, etc., can be predicted in a simple manner.Keywords
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